Work

A Study of Dual Barrier Pt/Ir/n‐GaN Schottky Barrier Diode for High Voltage and High Temperature Applications

Year: 2025

Type: article

Source: physica status solidi (a)

DOI: 10.1002/pssa.202500576

Authors: Yezazul Nishath Shaik, Kuldip Singh, Suchandan Pal

Institutions: Central Electronics Engineering Research Institute, Council of Scientific and Industrial Research, Academy of Scientific and Innovative Research

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: closed

OpenAlex ID: W7110778840

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Cites: 28

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