Year: 2025
Type: article
Abstract: The development of next generation computing paradigms and memory devices relies on exploiting the unique properties of ferroelectric materials. Hafnium oxide-based ferroelectrics, which are highly compatible with semiconductor processing, offer a promising alternative to conventional perovskite ferroelectrics that face integration challenges. However, the enhancement of ferroelectricity in hafnium oxide and its dependence on epitaxial growth orientation remain insufficiently explored. In this study, we demonstrate that the epitaxial orientation of hafnium oxide is strongly correlated with the in-plane strain conditions. Depending on the strain state, the HfO2 film exhibits either (002)- or (111)-oriented epitaxial growth. Notably, the (002)-oriented films exhibit enhanced ferroelectric polarization. These findings provide an effective strategy for achieving controllable epitaxial growth of ferroelectric HfO2 and for further improving its ferroelectric performance in practical applications.
Source: Applied Physics Letters
DOI: 10.1063/5.0292944
Authors: Li Cheng, Ziqiang Chi, Jingjing Zhang, Yanru Wu, Ruibin Zhao, Haibo Yang, Lisha Guo, Rui Su, Wenyao Zhang, Xin Zhang, Yexuan Han, Chenru Hao
Institution: Hebei Medical University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: hybrid
Awards: G3262911844, G8799149826
OpenAlex ID: W7110865866