Work

GaN HEMT Gate Driver Circuit Utilizing Variable Capacitors

Year: 2025

Type: conference-paper

Source: VBN Forskningsportal (Aalborg Universitet)

DOI: 10.30420/566541404

Authors: Kubulus, Pawel Piotr; id_orcid 0009-0006-9045-6758, Hansen, Henrik, Jorgensen, Asger Bjorn; id_orcid 0000-0003-2171-4531, Munk-Nielsen, Stig; id_orcid 0000-0001-9653-5437, Beczkowski, Szymon; id_orcid 0000-0002-3627-9272

Institution: Aalborg University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W7110981813

FWCI:

Cites:

Cited by:

Related to: