Tuning the low-energy band structure in twisted bilayer WSe 2
Year: 2025
Type: article
Abstract: Tuning the electronic structures of two-dimensional (2D) material-based heterostructures is of crucial importance for their use in functional next-generation electronics. Here, through angle-resolved photoemission spectroscopy with nanoscale spatial resolution (nano-ARPES), we systematically track the evolution of the near-Fermi-level electronic structure of bilayer WSe2 over a large range of twist angle. While the momentum positioning of the valence band maxima is independent of twist angle, we find that the energetic separation between the hole bands at the K point of the Brillouin zone and the higher binding-energy hole band at Γ can be varied in excess of 100 meV. We explore the mechanisms underpinning this evolution and discuss the implications for tuning both the size of the band gaps, and the efficiency of the spin-dependent electron-phonon coupling channels in homobilayer transition metal dichalcogenide devices.
DOI: 10.1103/2hwx-5bg8
Authors: T.-H.-Y. Vu, O. J. Clark, N. H. Jo, J. Blyth, Q. Li, C. Jozwiak, A. Bostwick, J. B. Muir, L. Jia, J. A. Davis, I. Di Bernardo, A. Grubišić-Čabo, K. Xing, W. Zhao, S. H. Ryu, S. H. Lee, Z. Mao, K. Watanabe, T. Taniguchi, B. A. Chambers, S. L. Harmer, E. Rotenberg, M. S. Fuhrer, M. T. Edmonds
Institutions: Monash University, Lawrence Berkeley National Laboratory, ARC Centre of Excellence in Future Low-Energy Electronics Technologies, Swinburne University of Technology, Universidad Autónoma de Madrid, University of Groningen, Pennsylvania State University, National Institute for Materials Science, Flinders University, Melbourne Centre for Nanofabrication
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: green
Funders: National Science Foundation, U.S. Department of Energy, University of Pennsylvania, Australian National Fabrication Facility, Australian Nuclear Science and Technology Organisation, Pennsylvania State University, Australian Government, Australian Institute of Nuclear Science and Engineering, Australian Synchrotron, Ministry of Education, Culture, Sports, Science and Technology, Australian Research Council, Japan Society for the Promotion of Science, Division of Materials Research
Awards: G1273301394, G1286236842, G1863003419, G2442584775, G3083819904, G3100489792, MIP: 2D Crystal Consortium (MIP-2DCC), G3829267213, G4162329948, G42916606, G4653638168, G4806815962, G5630498599, G6902702339, Tuning electronic and optical properties in twisted 2D semiconductors, G898758523, G969889393
OpenAlex ID: W7111157766
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