Year: 2025
Type: article
Abstract: GaAs-based VCSELs with oxide-confined (OC) are performed by using fine selective radial “oxidation of AlAs-rich (AlGaAs) layers” from outside to the device axis leaving the central part unaffected. Such oxide apertures produced inside the cavities enhance the radial confinements related to current spreading and to a field that is optical altogether. A Modern design with a single fundamental mode is proposed to reduce threshold current operation to the extent of higher output by using the two OC VCSELs. Both of the oxide apertures were added to the node position of the resonator standing wave. Then, the diameters of together apertures can be adjusted independently giving VCSEL design an extra degree of freedom that allows optimization. It found that when both apertures had a radius of 4.2 µm, the low threshold current operation at a higher extent output is achieved with a single fundamental mode.
Authors: Maher Faeq Mohammed, Nidam M. Abdul Majeed, Mayada J. Hamwdi
Institutions: University of Kirkuk, Northern Technical University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: diamond
OpenAlex ID: W7111293271
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