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Інфрачервоні Детектори На Основі Потрійних Напівпровідникових Квантових Структур

Year: 2016

Type: article

Abstract: The development of growth process of multilayer semiconductor structures enables investigation of a new class of infrared detectors – detectors on quantum structures. The current trends of infrared receivers’ development are caused by active material research for a variety of nanostructures. The current state of development of infrared quantum structure detectors using ternary semiconductor alloys is considered. The maximal detectivity values of traditional detectors and quantum structure detectors are presented. The analysis of parameters for different types of materials and structures is performed.

Source: The Scientific Issues of Ternopil Volodymyr Hnatiuk National Pedagogical University Series pedagogy

Authors: Saurova, Tatiana, Baida, Irirna

Language: Ukrainian

Topic: Advanced Semiconductor Detectors and Materials

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W7111842941

FWCI:

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