Electric field-modulated AlGaN/GaN Schottky barrier diode with high breakdown voltage via polarized charge around thin GaN channel
Year: 2025
Type: article
Source: Applied Physics Letters
DOI: 10.1063/5.0296318
Authors: Tao Zhang, Junjie Yu, Heyuan Chen, Yachao Zhang, Shengrui Xu, Xiangdong Li, Huake Su, Jiahao Chen, Hongchang Tao, Yue Hao, Jincheng Zhang
Institutions: Xidian University, Guangzhou Institute of Technology
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
Award: G7965464166
OpenAlex ID: W7113899773