Work

Effects of oxygen thermal annealing on AlN trench metal-semiconductor field-effect transistors (MESFETs) on single-crystal AlN substrates

Year: 2025

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0304969

Authors: Bingcheng Da, Dinusha Herath Mudiyanselage, Dawei Wang, Junzhe Xie, Xianzhi Wei, Houqiang Fu

Institutions: Arizona State University, Texas State University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Science Foundation, U.S. Department of Energy

Awards: ULTRA MATERIALS FOR A RESILIENT, SMART ELECTRICITY GRID, CAREER: Ultrawide Bandgap Aluminum Nitride FETs for Power Electronics

OpenAlex ID: W7114775265

FWCI: 0.93

Cites: 42

Cited by: 3

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