Solution-processed charge-trap/ferroelectric hybrid memory transistor for enhanced data storage and neuromorphic computing
Year: 2025
Type: article
Source: Journal of Materials Chemistry C
DOI: 10.1039/d5tc03771a
Authors: Hayoung Kim, Amos A. Boampong, Yujeong Hwang, Sin-Hyung Lee, Min-Hoi Kim
Institutions: Hanbat National University, University of Seoul
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
Awards: G4661686399, G7722063461, G8939586849
OpenAlex ID: W7114889818
