Work

Erratum to: Experimental Testing of Power Semiconductor Devices for Thermal Stability under Static and Dynamic Current Overloads

Year: 2025

Type: erratum

Abstract: An Erratum to this paper has been published: https://doi.org/10.3103/S1068371225100013

Source: Russian Electrical Engineering

DOI: 10.3103/s1068371225100013

Authors: V. Ya. Khorolsky, A. M. Isupova, K. M. Yundin, I. K. Sharipov

Institutions: North-Caucasus Federal University, Stavropol State Agrarian University, Don State Technical University

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: bronze

OpenAlex ID: W7115603105

Cites:

Cited by:

Related to: