Work

Performance enhancement of GaN-based VCSELs with an n-AlGaN hole current confinement layer

Year: 2025

Type: article

Authors: Xiantian Shi, Taiping Lu, Wenxiao Wang, Yuanchao Li, Jing Han, Zhigang Jia, Xiansheng Tang, Doudou Liang, Qing Guo, Fengzhou Zhao, Yadan Zhu, Lichun Zhang

Institutions: Ludong University, Taiyuan University of Technology, Qilu University of Technology, Shandong Academy of Sciences

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Natural Science Foundation of Shandong Province

Awards: G4559227449, G5874188882, G7640041032, G7691346489, G8541945114

OpenAlex ID: W7115698065

FWCI: 0.323

Cites: 33

Cited by: 1

Related to: