Gamma irradiation effects on the electrical and structural properties of SnS/ITO heterojunction for radiation dosimetry applications
Year: 2025
Type: article
Abstract: This study presents the synthesis and comprehensive characterization of SnS/ITO thin films for gamma radiation sensing applications. The films were fabricated using a spin-coating technique. X-ray diffraction (XRD) analysis confirmed the formation of a polycrystalline nanostructured trigonal phase. The optical bandgap of the as-deposited film was approximately 1.75 eV and decreased to ~1.65 eV following gamma irradiation at a dose of 5 kGy. The electrical characteristics were evaluated using dark current–voltage (I–V) measurements. Under forward bias, the turn-on voltage decreased from 2.45 V to 2.23 V with increasing radiation dose, accompanied by a rise in current levels. The ideality factor of the SnS/ITO heterojunction, initially greater than unity, showed a decreasing trend with increasing gamma dose, indicating enhanced junction quality. Furthermore, key parameters such as saturation current, series resistance, and barrier height exhibited dose-dependent variations, attributed to changes in defect density and charge carrier trapping at the interface. The gamma-ray-induced generation of charge carriers in the depletion region was analyzed to assess the radiation response of the heterostructure. The sensitivity of the SnS/ITO thin films to gamma exposure demonstrates their strong potential as candidate materials for radiation sensor and dosimetry applications.
Authors: S. Aldawood, Syed Mansoor Ali, H. Kassim, Aziz A. Aziz
Institution: King Saud University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $1,400
Award: G121143717
OpenAlex ID: W7115736713