Work

Comparative thickness dependent structural, dielectric and ferroelectric property study of PLD deposited ZrO2 thin films

Year: 2025

Type: article

Abstract: This study investigates the structural and ferroelectric properties of ZrO 2 thin films (∼10 nm, 20 nm, and 40 nm) deposited via Pulsed Laser Deposition (PLD). Structural analysis reveals the presence of tetragonal/orthorhombic phases and significant out-of-plane compressive strain at lower thicknesses. Increasing film thickness enhances crystallinity and causes XRD peak shifts towards standard positions, indicating reduced strain. Ferroelectric measurements show that remnant polarisation ( P r ) and coercive field ( V c ) decrease, while saturation polarisation ( P s ) increases with thickness. This behavior is attributed to strain relaxation and the emergence of the monoclinic phase in films thicker than 20 nm. The 20 nm ZrO 2 film demonstrates an optimal balance of ferroelectric phase fraction and memory window performance, making it superior to the 10 nm and 40 nm films.

Source: Materials Science and Engineering B

DOI: 10.1016/j.mseb.2025.119143

Authors: Dhrubojyoti Roy, Bijaya Kumar Panda, Chintak Kamalesh Parashar, Mohua Chakraborty

Institutions: C.V. Raman Global University, Indian Institute of Technology Guwahati

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: hybrid

Estimated APC paid: $3,140

Funder: UGC-DAE Consortium for Scientific Research, University Grants Commission