MnSi 2 Te 4 : A van der Waals Antiferromagnetic Semiconductor with Large Negative Magnetoresistance
Year: 2025
Type: article
Abstract: High Resolution Image Download MS PowerPoint Slide Magnetism in van der Waals semiconductors offers significant potential for fundamental research on low-dimensional magnetism and the development of high-performance two-dimensional spintronic devices. Here, we report the growth, physical properties, and first-principles calculations of a new dual-octahedral transition metal chalcogenide (DTMC) MnSi 2 Te 4 . MnSi 2 Te 4 features a layered structure with an intralayer heterostructure, where the metal octahedra and nonmetal dimeric octahedra form zigzag chains alternately. Property characterization reveals that MnSi 2 Te 4 is a collinear G-type antiferromagnetic semiconductor, with a Néel temperature T N of 18.6 K and a significant unsaturated negative magnetoresistance (NMR) reaching −42.5% at 9 T and 100 K. First-principles calculations on the electronic band structure demonstrate that the large NMR primarily originates from the spin splitting due to parity-time symmetry breaking. This study not only discovers a new member of DTMCs with a unique crystal structure and large NMR, but also establishes a promising platform for investigating next-generation spintronic devices.
DOI: 10.1021/jacs.5c13595
Institutions: Chinese Academy of Sciences, Institute of Physics, University of Chinese Academy of Sciences, University of Tennessee at Knoxville, Institute of High Energy Physics, Beijing Synchrotron Radiation Facility, Oak Ridge National Laboratory, Hong Kong University of Science and Technology, University of Science and Technology Beijing, Shanghai Jiao Tong University
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $4,500
Funders: National Natural Science Foundation of China, Chinese Academy of Sciences, Shanghai Jiao Tong University, University of Science and Technology Beijing, University of Chinese Academy of Sciences, Institute of High Energy Physics, National Key Research and Development Program of China, Beijing Synchrotron Radiation Facility, High Energy Physics, Oak Ridge National Laboratory
OpenAlex ID: W7116671173