Work

Dislocations influence the background hole densities in Ge/Si virtual substrates

Year: 2025

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0308836

Authors: H. Tetzner, A. A. Corley-Wiciak, A. J. Devaiya, O. Concepción, D. Stolarek, M. A. Schubert, Y. Yamamoto, D. Buca, G. Capellini

Institutions: Leibniz Institute for High Performance Microelectronics, European Synchrotron Radiation Facility, Forschungszentrum Jülich, Jülich Aachen Research Alliance, Nagoya University, Roma Tre University

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: Deutsche Forschungsgemeinschaft

Award: Thermoelektrische Eigenschaften von SiGeSnMikrobauelementen

OpenAlex ID: W7116676995

FWCI: 0.738

Cites: 39

Cited by: 2

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