Disorder-induced electron localization and electronic states coupling in nitride semiconductors
Year: 2025
Type: article
Source: Applied Physics Letters
DOI: 10.1063/5.0299514
Institutions: State Ethnic Affairs Commission, Southwest Minzu University, Peking University, State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, Southern University of Science and Technology, Wuxi Institute of Technology, Sichuan University, University College London, University of Electronic Science and Technology of China, Centre National de la Recherche Scientifique, École Nationale Supérieure d'Ingénieurs de Caen, Commissariat à l'Énergie Atomique et aux Énergies Alternatives, Centre de Recherche sur les Ions, les Matériaux et la Photonique, University of Sheffield
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W7116750445