Work

Enhanced breakdown voltage in β -Ga2O3 Schottky diodes via fast neutron irradiation and electro-thermal annealing

Year: 2025

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0297242

Authors: Saleh Ahmed Khan, Sudipto Saha, Ahmed Ibreljic, Stephen Margiotta, Jiawei Liu, Walid Amir, Surajit Chakraborty, Uttam Singisetti, A F M Anhar Uddin Bhuiyan

Institutions: University of Massachusetts Lowell, University at Buffalo, State University of New York

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: closed

Funders: National Science Foundation, Advanced Research Projects Agency - Energy, Air Force Office of Scientific Research, Coherent / II-VI Foundation

Awards: ASCENT: Enabling efficient high power grid applications by high voltage rating ultrawidebandgap transistors, G2152459410, G2264530986, Collaborative Research: Beta-Ga2O3 high voltage power MOSFETs using metal-organic chemical vapor deposition, MRI:Acquisition of Ultra high Performance Electron Beam Lithography System for the Western New York Region, ERI: LPCVD-Based Growth and Etching of Gallium Oxide for High Aspect Ratio Vertical Trench Schottky Barrier Diodes, Collaborative Research: Radiation-Tolerant and Thermally Managed High-Voltage Gallium Oxide Power Diodes for High-Power Space Electronics

OpenAlex ID: W7116754177

FWCI: 0.81

Cites: 36

Cited by: 5

Related to: