Self-biased visible-NIR photodetection enabled via a dual-heterojunction n-MoS 2 /p-CuO/n-Si design
Year: 2025
Type: article
Abstract: Self-biased dual-heterojunction n-MoS 2 /p-CuO/n-Si photodetector enabling Vis–NIR (625–808 nm) detection at 0 V.
Source: Materials Advances
DOI: 10.1039/d5ma01150g
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $1,962
Award: G5174915960
OpenAlex ID: W7116771056
