Work

Improving Contact Resistance in Top-Gate Carbon Nanotube Transistor through Self-Aligned MoO x Nanoparticle Contact Doping

Year: 2025

Type: article

Abstract: High Resolution Image Download MS PowerPoint Slide Carbon nanotubes (CNTs) are promising candidates for next-generation back-end-of-line (BEOL) compatible devices due to their excellent scalability, energy efficiency, compatibility with low-temperature processes, and high-speed charge transport. However, top-gate carbon nanotube field-effect transistors (CNFETs) often suffer from high contact resistance R C, which significantly reduces the on-state current and hinders the realization of high-performance devices. This is primarily attributed to gate-field screening at the contact–channel interface, which increases R C compared to their back-gate counterparts. In this work, we address this limitation through a combination of numerical modeling and experimental validation using self-aligned contact doping enabled by MoO x nanoparticles. A self-consistent one-dimensional Poisson solver coupled with the Landauer–Büttiker formalism reveals that contact doping improves the Schottky barrier and enhances carrier tunneling. Experimentally, top-gate CNFETs with 0.8 nm MoO x -doped Pd contacts exhibit a 58% reduction in R C, a significant increase in output current, and a reduction in effective Schottky barrier height from 72 to 20 meV, while maintaining long-term stability for over 71 days. Furthermore, Monte Carlo simulations incorporating realistic CNT diameter distributions predict a reduction of up to 52% in dense CNT arrays with a diameter of 1.0 nm. This study provides both fundamental insight and experimental demonstration of self-aligned MoO x contact doping as a scalable strategy to mitigate contact resistance in top-gate CNFETs.

Source: ACS Applied Electronic Materials

DOI: 10.1021/acsaelm.5c01952