High power diode lasers at 1470 nm with continuous power exceeding 10 W
Year: 2025
Type: article
Abstract: High power InP-based diode lasers operating at 1470 nm have attracted considerable interest in various applications. In this paper, we report high-power lasers with varying stripe widths, which employ an extremely asymmetric epitaxial design for high-efficiency carrier injection and low optical loss. The characteristic temperature of the differential quantum efficiency ( T 1 ) exceeds 270 K. Single-emitter lasers with 200 μm wide aperture achieve over 10 W continuous-wave (CW) power at 20 °C and a peak wall-plug efficiency of 42%. The maximum CW power reaches 11.7 W in devices with 300 μm stripe width. The dependence of divergence angle on the current is investigated.
Source: Applied Physics Express
Authors: Rong Zhao, Cunzhu Tong, Lijie Wang, Hangyu Peng, Yunfei Ji, Ziao Gong, Yingjun Guo, Yanan Liu, Bo Liu, Bo Meng
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $2,365
Awards: G1645549588, G7605889829
OpenAlex ID: W7117294416