Research on the Parasitic Inductance of the Bonding Wires in IGBT Modules Based on Their Morphology and Layout
Year: 2025
Type: article
Abstract: As a typical electronic switching device, IGBT is widely used in various fields. Reducing the parasitic inductance parameters of IGBT is of great significance for improving the performance of power devices, enhancing system stability and reliability. To study the parasitic inductance of the internal bonding wire connection structure during the operation of IGBT modules, this paper considers the morphological modeling of bonding wires, bonding parameters, and the layout of bonding wire arrays, and proposes a new analysis model. Through mathematical calculation of the analysis model and Ansys Q3D simulation, the bonding wires with different geometric dimensions and layouts were studied and good correlation were obtained. This will reduce the impact of bonding parameters on the total parasitic inductance of the bonding wire during the pre-layout stage.
Source: Micromachines
DOI: 10.3390/mi17010026
Authors: Junwei Cao, Sheng Wu, Yanhui Wang, Yanhui Wang, Chongyang Xu, Xiaotong Wang, Weibin Jiang, Yingchun Wang, Yingchun Wang, Yuan Wang, Yuan Wang
Institution: Harbin Engineering University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $2,534
Awards: G1873597564, G8151050144
OpenAlex ID: W7117298882