Work

Investigation of the Spatial Distribution of Excess Arsenic in an LT-GaAs Layer by Rocking Curve Imaging

Year: 2025

Type: article

Source: Crystallography Reports

DOI: 10.1134/s1063774525601352

Authors: V. I. Akkuratov, S. A. Nomoev

Institutions: Kurchatov Institute, A.V. Shubnikov Institute of Crystallography, National Research Nuclear University MEPhI

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W7117309654

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Cites: 20

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