Work

Experimental Investigation and Behavioral Modeling of the Ron vs. Gate Overshoots Relationship in Schottky p-GaN HEMTs

Year: 2025

Type: conference-paper

Source: IEEE Workshop on Wide Bandgap Power Devices and Applications

DOI: 10.1109/wipda63755.2025.11303413

Authors: Ludovic Roche, David Trémouilles, Emmanuel Marcault, Corinne Alonso

Institutions: Centre National de la Recherche Scientifique, Université Toulouse III - Paul Sabatier, Laboratoire d'Analyse et d'Architecture des Systèmes, Commissariat à l'Énergie Atomique et aux Énergies Alternatives

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W7117485678

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Cites: 8

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