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Electrostatically Doped Dual Gate Schottky Barrier Nanotube FET: An Optimized Design for High Performance Applications

Year: 2025

Type: article

Source: Journal of Circuits Systems and Computers

DOI: 10.1142/s0218126626500611

Authors: Mehak Singla, Neeraj Sharma, Amit Saini, Charu Madhu

Institution: Panjab University

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W7117552886

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Cites: 35

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