Radio-frequency variability of GAA Si NS CFETs induced by PVE and IPF simultaneously
Year: 2025
Type: article
Abstract: Variability in gate-all-around (GAA) silicon nanosheet (Si NS) complementary field-effect transistors (CFETs) stems from two primary sources: process-variation effect ( PVE ) and intrinsic parameter fluctuations ( IPF ). In this work, a systematic TCAD-based variability framework is developed to quantitatively assess the impact of PVE and IPF on the analog and radio frequency (RF) performance of vertically stacked GAA Si NS CFETs. Key geometrical factors—namely NS thickness ( T NS ), width ( W NS ), and gate length ( L G )—play a pivotal role in shaping intrinsic resistance ( r o ), output resistance ( R out ), voltage gain ( A V ), cut-off frequency ( f T ), and 3-dB bandwidth ( f 3 dB ), due to their influence on surface potential profiles and carrier transport behavior. Notably, within IPF , variations are predominantly governed by random nanoscale metal grains, where work function fluctuations ( WKF ) strongly perturb the channel surface potential, thereby inducing significant variability in A V , f T , f 3 dB , other radio RF parameters. A statistically significant ensemble of calibrated device simulations is employed to decouple and quantify the individual and combined contributions of PVE and IPF . Furthermore, small-signal s-parameter analysis is performed to extract RF figures of merit under realistic loading conditions, providing practical design insights for variability-aware CFET optimizations.
Source: Solid-State Electronics
Authors: Sekhar Reddy Kola, Min-Hui Chuang, Yiming Li
Institution: National Yang Ming Chiao Tung University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $2,410
Awards: Effects of Source/Drain Metal Contact Structures and Materials on Electrical Characteristics of Two-Dimensional Transition Metal Dichalcogenides Field-Effect Transistors, Fabrication of Advanced Lfet and 2d Devices; Development of High-Density/High-Performance Transistors; Development of Advanced Stacked Channels and Material Analysis in Å-Scale; Deep-Learning-Assisted Characteristic Analyses of Emerging Fets; Cryogenic Cmos / Sram Circuit Modeling and Measurement, Electrical Characteristic Fluctuation of 2d-Material-Based Gate-All-Around Field-Effect Transistors Induced by Pve and Ipf, Fabrication of Advanced Lfet and 2d Devices; Development of High-Density/High-Performance Transistors; Development of Advanced Stacked Channels and Material Analysis in Å-Scale; Deep-Learning-Assisted Characteristic Analyses of Emerging Fets; Cryogenic Cmos / Sram Circuit Modeling and Measurement
OpenAlex ID: W7117582239