Work

Self-Powered Wavelength-Selective Ultraviolet Bipolar Photodetector Based on Al/p-GaN/In:Ga 2 O 3 /SnO 2 Structure for Secure Optical Communication

Year: 2025

Type: article

Source: ACS Applied Materials & Interfaces

DOI: 10.1021/acsami.5c20002

Authors: Xiaoping Zhang, Rui Deng, Yongfeng Li, Dayong Jiang

Institutions: Changchun University of Science and Technology, Jilin University

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funder: Jilin Scientific and Technological Development Program

Awards: G1185297616, G3885083710

OpenAlex ID: W7117584071

FWCI:

Cites: 49

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