Work

Large‐Area Polymorphic In 2 Se 3 Ferroelectric Transistor Array for Stable Nonvolatile Storage and High‐Precision Neuromorphic Computing

Year: 2025

Type: article

Abstract: ABSTRACT 2D ferroelectric field‐effect transistors (FeFETs) are expected to be a practical solution for next‐generation in‐memory computing, seamlessly integrating with computer hardware architectures to overcome the von Neumann bottleneck. At present, emerging 2D materials are driving chip miniaturization. Among them, In 2 Se 3 stands out, as both theoretical and experimental studies have confirmed its novel physical properties with practical applications. Notably, monolayer In 2 Se 3 retains ferroelectricity at room temperature and exhibits high carrier field‐effect mobility (µ FE ). Furthermore, it can be synthesized via chemical vapor deposition (CVD) as thin films, demonstrating strong potential for large‐area 2D FeFET array. Here, we investigate the In 2 Se 3 thin film FeFET array prepared by CVD, which has a µ FE of 151.7 cm 2 V −1 s −1 and an on‐off ratio of up to 10 6 . Inspiringly, the array exhibits stable, non‐volatile characteristics, maintaining a high‐to‐low resistance state window of larger than 10 2 even after 1800 s. Furthermore, we explore its potential for neuromorphic computing by applying the array to machine learning tasks across various datasets and neural network architectures, consistently achieving a high 2D materials, ferroelectric, neuromorphic, polymorphic, transistor recognition accuracy greater than 90%.

Source: Small

DOI: 10.1002/smll.202503908