Optimizing TiO2/HfO2 Multilayer RRAM for Self-Rectifying Characteristics
Year: 2025
Type: article
Abstract: Sneak current refers to leakage currents in RRAM crossbar arrays without selector devices, disrupting the accuracy of weighted sum operations in neuromorphic systems, leading to performance degradation and increased power consumption. This study presents a bilayer RRAM structure with a selector layer designed to suppress sneak current in neuromorphic synapse arrays. By utilizing a TiO2/HfO2 bilayer structure, it is demonstrated that increasing the thickness of TiO2 and the work function of the top electrode effectively suppresses current under reverse bias compared to single-layer devices. The bilayer structure achieves rectification levels of 10 to 30 times higher than the single-layer configuration, while increasing the work function of the top electrode yields rectification improvements ranging from 10 to 40 times. This approach enhances the accuracy of synaptic weighted sum operations.
Source: Micromachines
DOI: 10.3390/mi17010049
Authors: Chan-Hyeok Nam, Myung-Hyun Baek
Institution: Gangneung–Wonju National University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $2,534
OpenAlex ID: W7117732484