Work

High hole mobility in AlN from negative crystal-field splitting

Year: 2026

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0307823

Authors: Jie-Cheng Chen, Amanda Wang, Chuan F. C. Chang, Joseph E. Dill, Huili Grace Xing, Emmanouil Kioupakis, Feliciano Giustino

Institutions: The University of Texas at Austin, University of Michigan, Cornell University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: U.S. Department of Energy, Semiconductor Research Corporation, Defense Sciences Office, DARPA

Awards: G102163711, G42916606, TOWARD EXASCALE COMPUTING OF ELECTRON-PHONON COUPLINGS FOR FINITE-TEMPERATURE MATERIALS DESIGN

OpenAlex ID: W7118187115

FWCI: 2.451

Cites: 63

Cited by: 1

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