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Alleviating trade-off between dark current and sensitivity of β-Ga 2 O 3 X ray detectors via defect engineering

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Year: 2026
Type: article
Source: Journal of Materials Chemistry C
DOI: 10.1039/d5tc03993b
Authors: Xinyu Liu, Yiyuan Liu, Yang Li, Zeliang Gao, Kun Zhang, Wenxiang Mu
Institutions: Shandong University, State Key Laboratory of Crystal Materials
Language: English

Topic: Ga2O3 and related materials
Subfield: Electronic, Optical and Magnetic Materials
Field: Materials Science
Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Natural Science Foundation of Shandong Province, Shenzhen Fundamental Research Program, Key Technology Research and Development Program of Shandong, National Key Research and Development Program of China
Awards: G2878936546, G4997227884, G5950108647, G6303517484, G8263853379, G8556270249
OpenAlex ID: W7118452240
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Cites: 46
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