Work

Investigation on the mechanism of stability variation with gate–drain bias in AlGaN/GaN-on-Si HEMTs

Year: 2026

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0302183

Authors: Yichong Ding, Jiejie Zhu, Ziyue Zhao, Chupeng Yi, Zeng Li, Mengdi Li, Lingjie Qin, Yuxi Zhou, Shuo Wang, Yuchen Qian, Wanshuo Liao, Yiwei Wang, Xiaohua Ma, Yue Hao

Institution: Xidian University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Fundamental Research Funds for the Central Universities

Awards: G1071447927, G2436163274, G704711181, G8919149685

OpenAlex ID: W7118474205

FWCI:

Cites: 14

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