SiON Etch Characteristics Using Low-GWP C 2 F 4 O as a Replacement of CF 4
Year: 2026
Type: article
Institution: Sungkyunkwan University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
SDG: Climate action
Open Access status: closed
Awards: G2252197380, G3181406793
OpenAlex ID: W7118903116
