Work

Porous GaN: Anion-Specific Electrochemical Etching Mechanisms and Morphological Control

Year: 2025

Type: article

Source: Apollo (University of Cambridge)

Authors: paragon-plus: 7819304, paragon-plus: 7784233, Zhang, Jiawei; paragon-plus: 7866584, Kappers, Menno J.; paragon-plus: 2916733, paragon-plus: 1136231

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W7119249209

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