Work

Varistructure resistive switching memory devices through dynamical redox of oxides

Year: 2026

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0281237

Authors: Hao-Nan Li, Lei Wang, Jiang Zhu, Yi-Xing He, Xian-Qin Liu, Yue-Qi Wang, Siwen Zhang, Jia-Yu Wang, Shu-Ming Zhao, Yong-Qi Zhou, Haijiao Harsan Ma, Yue Hao, Jincheng Zhang

Institution: Xidian University

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Key Research and Development Program of China, Fundamental Research Funds for the Central Universities

Awards: G222087042, G4325260170, G7336771713, G8897782944

OpenAlex ID: W7119504875

FWCI:

Cites: 42

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