Work

Atomic-layer precision etching of SiO 2 using sequential molecular adsorption and plasma activation

Year: 2026

Type: article

Abstract: A novel cycle-mode etching strategy combining reversible physisorption and a defect-mediated chemisorption achieves 1.4 Å per cycle, contamination-free, directional SiO 2 etching.

Source: Journal of Materials Chemistry C

DOI: 10.1039/d5tc03428k

Authors: Rakshith Venugopal, Nian Ran, Robert Blick, Robert Zierold, Jun Peng

Institutions: Universität Hamburg, Chinese Academy of Sciences, Shanghai Institute of Ceramics, State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Deutsches Elektronen-Synchrotron DESY

Language: English

Topic: Plasma Diagnostics and Applications

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: hybrid

Funders: Deutsche Forschungsgemeinschaft, National Natural Science Foundation of China, Bundesministerium für Bildung und Forschung, Universität Hamburg, Deutsches Elektronen-Synchrotron

Awards: G2107451954, SFB 986: Maßgeschneiderte Multiskalige Materialsysteme M3, G7343719231

OpenAlex ID: W7119507164

FWCI: 5.116

Cites: 54

Cited by: 3

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