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Growth mechanisms and defect formation in epitaxial CeO₂ thin films deposited on r-plane sapphire substrates

Year: 2025

Type: conference-paper

Source: HAL (Le Centre pour la Communication Scientifique Directe)

Authors: Chaslin, Edgar, Simon, Quentin, Borroto, Alexandro, Bruyere, S., Migot, Sylvie, Himdi, Mohamed, Castel, Xavier

Institutions: Institut d'Électronique et des Technologies du numéRique, Centre National de la Recherche Scientifique, Institut Jean Lamour, Université de Lorraine

Language: English

Topic: Electronic and Structural Properties of Oxides

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W7120779265

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