Year: 2022
Type: article
Abstract: Sorghum is an important crop that can absorb and accumulate abundant Si ranging, improving tissue toleranceto the water and salt stress and reducing sodium absorption. T hus, the objective was to verify the induction of resistance ingermination and seedling growth of sorghum seeds to salt and water stress during germination due to treatment with silicon.Two experiments were carried out with seeds of two sorghum cultivars (EA03 and EA955) were solution of potassium silicatesolutions at concentrations of 0, 0.3, 0.6, 0.9 and 1.2 g L-1, in the first experiment and seeds were submitted to water stress usingPEG 6000 (0, -0.2, -0.4, -0.6 and -0.8 MPa) in the second experiment were submitted to salt stress using NaCl (0, 75, 150 and 225 mM). Wereanalysed, germination, first germination count, shoot and root length, shoot to root ratio and seedling dry weight. The studiedgenotypes showed similar behavior when treated with potassium silicate. The presence of silicon in the treatment of seeds whenexposed to salt stress has no effect on germination, but attenuates salinity damage related to seedling growth. Silicon attenuatesthe effects of water stress on sorghum seeds, by maintaining germination up to the potential of -0.6 Mpa, and providing betterroot development. However, the treatment with potassium silicate does not prevent the damage caused by high levels of waterand salt stress, only attenuating its effects, thus, more studies are needed to better clarify the effects of Si on seeds.
Language: English
Subfield: Plant Science
Domain: Life Sciences
SDG: Zero hunger
Open Access status: gold
Estimated APC paid: $85
OpenAlex ID: W4386634679