GaAsSb–silicon interface analysis for photodetectors via direct wafer bonding
Year: 2026
Type: article
Abstract: Direct wafer bonding provides a scalable approach for integrating dissimilar semiconductors without lattice-matching constraints, enabling monolithic III-V integration on silicon (Si). GaAsSb is an attractive alloy owing to its tunable bandgap in the short-wave infrared region, which supports applications in communication, imaging, and sensing. The relatively small conduction band offset with silicon further facilitates efficient carrier transport across the bonded interface. We demonstrate GaAsSb–Si integration using plasma-activated direct wafer bonding, with argon plasma treatment to improve the surface hydrophilicity and bond strength. Structural and electrical characterizations, including contact angle goniometry, current-voltage, transmission electron microscopy, and scanning acoustic microscopy, confirm strong interfacial adhesion and device viability, underscoring the potential of GaAsSb/Si platforms for high-efficiency photodetectors.
Source: Optical Materials Express
DOI: 10.1364/ome.578886
Language: English
Topic: 3D IC and TSV technologies
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $1,843
OpenAlex ID: W7122754941