Work

Achieving high carrier concentration β-Ga2O3 epilayers via MOCVD using SiCl4 as dopant

Year: 2026

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0304883

Authors: Yaoping Lu, Zhenni Yang, Titao Li, Duanyang Chen, Hongji Qi, Haizhong Zhang, Xiaoqiang Lu

Institutions: Fuzhou University, Chinese Academy of Sciences, Shanghai Institute of Optics and Fine Mechanics

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Award: G1751233889

OpenAlex ID: W7122766171

FWCI: 3.924

Cites: 40

Cited by: 4

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