Work

The mechanism of single-event burnout in NiO/ β -Ga2O3 heterojunction diodes under atmospheric neutron irradiation

Year: 2026

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0297946

Authors: Silei Zhong, Jiajun Li, Xing Li, Weili Fu, Yuxin Deng, Zhifeng Lei, Chao Peng, Hong Zhang, Zhangang Zhang, Yujuan He, Teng Ma, Leidang Zhou, Xing Lu

Institutions: Sun Yat-sen University, China Electronic Product Reliability and Environmental Test Institute, State Key Laboratory of Optoelectronic Materials and Technology, Xi'an Jiaotong University

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, National Key Research and Development Program of China

Awards: G204592175, G3886792693, G542239786, G6625072886

OpenAlex ID: W7122772178

FWCI: 6.168

Cites: 24

Cited by: 6

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