Work

0.53-mΩ.cm 2 /592-V High Breakdown Voltage GaN-on-Sapphire Schottky Diodes Without Edge Termination

Year: 2026

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2026.3652934

Authors: Hugo Bouillaud, Beatriz Orfao, Etienne Okada, Yannick Roelens, Malek Zegaoui, Mohammed Zaknoune

Institutions: Centre National de la Recherche Scientifique, Université de Lille, Institut d'Electronique, de Microélectronique et de Nanotechnologie, Institut de Recherche sur les Composants logiciels et matériels pour l'Information et la Communication Avancée

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: Agence Nationale de la Recherche

Award: THz transistoR EXperience for 6G

OpenAlex ID: W7123351417

FWCI: 7.426

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Cited by: 3

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