Work

Resistive Switching Characteristics of PPX-Based Memristors with PbTe Nanoparticles under Photoexcitation

Year: 2025

Type: article

Source: Russian Microelectronics

DOI: 10.1134/s1063739725600876

Authors: A. D. Trofimov, S. N. Nikolaev, A. V. Emelyanov, V. A. Demin, V. V. Rylkov

Institutions: Kurchatov Institute, Moscow Institute of Physics and Technology

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W7123562427

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Cites: 36

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