Quench rate dependence of the center formation in Er-implanted Si
Year: 2026
Type: article
DOI: 10.1364/josab.582175
Authors: Mark A. Hughes, Huan Liu, Yaping Dan
Institution: Shanghai Jiao Tong University
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W7123612075
