Work

Formation and Evolution Mechanism of Dislocation Piles Induced by Triangle Defects in Thick 4H–SiC Epilayers

Year: 2026

Type: article

Source: Crystal Growth & Design

DOI: 10.1021/acs.cgd.5c01478

Authors: Xiyao Huang, Mingsheng Xu, Xinyue Hou, Shan Yang, Yifei Chen, Yapeng Guo, Li Sun, Shuqiang Li, Ling Guo, Jisheng Han, Xiangang Xu

Institution: Shandong University

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Taishan Scholar Project of Shandong Province, Major Scientific and Technological Innovation Project of Shandong Province, National Science and Technology Major Project

Awards: G1085742140, G1473056774, G6677014797, G8320985247

OpenAlex ID: W7123692336

FWCI: 1.766

Cites: 37

Cited by: 1

Related to: