Work

Voltage‐Free Flexoelectric Gating of α‐In 2 Se 3 ‐Based Optoelectronic Synapses for Enhanced Visual Memory Applications

Year: 2026

Type: article

Source: Advanced Functional Materials

DOI: 10.1002/adfm.202525617

Authors: Zian Hong, Hongli Chen, Jianing Wang, Zhaotan Gao, Yafang Li, Kai Jiang, Liyan Shang, Jinzhong Zhang, Liangqing Zhu, Yawei Li, Zhigao Hu

Institutions: East China Normal University, Shanghai Dianji University, Shanxi University

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Awards: G2958696555, G7713386161

OpenAlex ID: W7123876900

FWCI: 6.822

Cites: 45

Cited by: 4

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