Electrical detection and control of synthetic antiferromagnets via perpendicular nanoscale magnetic tunnel junctions
Year: 2026
Type: article
Abstract: Detecting the magnetic states of synthetic antiferromagnets (SAFs) at the nanoscale is challenging due to their low net magnetization. We demonstrate an electrical method based on tunneling magnetoresistance (TMR) in nanoscale magnetic tunnel junctions to selectively detect the magnetization of a single SAF sublayer. TMR hysteresis loops reveal distinct switching behaviors governed by the competition between magnetic anisotropy and interlayer exchange coupling. This sensitivity enables direct quantification of exchange coupling under both field- and spin-transfer torque-driven reversals, while accessing the overall SAF magnetic state independent of its net magnetization.
Source: Physical Review Applied
DOI: 10.1103/ghln-jmzt
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: hybrid
Awards: European pilot line for beyond 2nm leading edge System-on-Chip leadership, Electrical control of magnetic racetrack memory devices based on synthetic antiferromagnetic materials, G576681395, G6057811149, G7389184707, G7795100286, Electrically controlled spintronic logic based on chiral coupling
OpenAlex ID: W7123955558