Work

214 MW/cm2 vertical β -Ga2O3 UMOSFETs enabled by HF sidewall treatment

Year: 2026

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0310882

Authors: Anjing Luo, Gaofu Guo, Zhucheng Li, Zhili Zou, Xuanze Zhou, Tiwei Chen, Li Zhang, Guangwei Xu, Chunhong Zeng, Xiaodong Zhang, Wenhua Shi, Yong Cai, Shibing Long, Zhongming Zeng, Baoshun Zhang

Institutions: University of Science and Technology of China, Chinese Academy of Sciences, Suzhou Institute of Nano-tech and Nano-bionics

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funder: Key Research and Development Program of Jiangxi Province

Award: G6015310717

OpenAlex ID: W7123963809

FWCI: 4.112

Cites: 23

Cited by: 4

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