Work

Atomic layer etching of silicon in Br2-containing plasmas

Year: 2026

Type: article

Source: Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

DOI: 10.1116/6.0005073

Authors: Mahmoud A. I. Elgarhy, Qinzhen Hao, Heejung Kim, Sang Ki Nam, Song-Yun Kang, Vincent M. Donnelly

Institutions: Al-Azhar University, University of Houston, Samsung Electronics (South Korea), Samsung (South Korea)

Language: English

Topic: Plasma Diagnostics and Applications

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Samsung

Award: G1889214744

OpenAlex ID: W7124136851

FWCI:

Cites: 40

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