Work

Thermal atomic layer etching of SnO2 by fluorination and ligand-exchange/conversion reactions using sequential hydrogen fluoride and Al(CH3)3 exposures

Year: 2026

Type: article

Source: Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

DOI: 10.1116/6.0005016

Authors: Chen Li, Jonathan L. Partridge, Troy A. Colleran, Micah H. Duffield, Yong Hyun Ham, Steven M. George

Institutions: University of Colorado Boulder, University of Colorado System

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: Semiconductor Research Corporation, Lam Research

Award: G1452086972

OpenAlex ID: W7124138288

FWCI: 1.692

Cites: 49

Cited by: 1

Related to: