Work

Enhanced conductance linearity in HfS2-based optoelectronic memristors via a defective h-BN interlayer for high-performance neuromorphic visual system

Year: 2026

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0303804

Authors: Lingxin Meng, Jiaqi Han, Peng Li, Xuanyu Shan, Chunliang Wang, Ye Tao, Xiaoning Zhao, Ya Lin, Zhongqiang Wang, Haiyang Xu, Yichun Liu

Institution: Northeast Normal University

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Awards: G5854708426, G6392168544, G7959619018, G823062192

OpenAlex ID: W7124159353

FWCI: 3.411

Cites: 38

Cited by: 2

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